Enhancement-mode AlN/GaN HFETs using cat-CVD SiN

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1566-1570

  Higashiwaki, Masataka ^a   Mimura, Takashi ^a,b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

AlN; Catalytic chemical vapor deposition (Cat CVD); Current gain cutoff frequency fT; Enhancement mode (E mode); GaN; Heterostructure field effect transistor (HFET); Maximum oscillation frequency (Fmax)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; HETEROJUNCTIONS; PASSIVATION; SILICON NITRIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CATALYTIC CHEMICAL VAPOR DEPOSITION; CURRENT-GAIN CUTOFF FREQUENCY; HETEROSTRUCTURE FET; MAXIMUM OSCILLATION FREQUENCY;

FIELD EFFECT TRANSISTORS;

EID: 34249940189     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.896607     Document Type: Article

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