Surface stabilization for higher performance AlGaN/GaN HEMT with in-situ movpe sin

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 361-366

  Germain, M ^a   Leys, M ^a   Derluyn, J ^a   Boeykens, S ^a   Degroote, S ^a   Ruythooren, W ^a   Das, J ^a   Vandersmissen, R ^a   Xiao, D P ^a   Wang, W ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; PASSIVATION; RELAXATION PROCESSES; SILICON NITRIDE;

SOURCE-DRAIN DC CURRENTS; SURFACE PROTECTION; SURFACE STABILIZATION; SURFACE STATES;

ALUMINUM COMPOUNDS;

EID: 23844518350     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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