Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 478-482

  Simms, Richard J T ^a   Pomeroy, James W ^a   Uren, Michael J ^b   Martin, Trevor ^a   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

FETs; Gallium compounds; Raman spectroscopy; Simulation; Thermal characterization

Indexed keywords

RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

CHANNEL TEMPERATURE; ELECTRICAL METHODS; THERMAL CHARACTERIZATION;

FIELD EFFECT TRANSISTORS;

EID: 39749199663     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.913005     Document Type: Article

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