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Volumn 89, Issue 16, 2006, Pages
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Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
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Author keywords
[No Author keywords available]
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Indexed keywords
CATHODOLUMINESCENCE;
DISLOCATIONS (CRYSTALS);
ELECTRIC POTENTIAL;
GALLIUM NITRIDE;
LAYERED MANUFACTURING;
SAPPHIRE;
CARRIER DIFFUSION;
CARRIER RECOMBINATION;
EPILAYERS;
EPITAXIAL GROWTH;
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EID: 33750178377
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2357881 Document Type: Article |
Times cited : (62)
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References (13)
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