메뉴 건너뛰기




Volumn 89, Issue 16, 2006, Pages

Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; GALLIUM NITRIDE; LAYERED MANUFACTURING; SAPPHIRE;

EID: 33750178377     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357881     Document Type: Article
Times cited : (62)

References (13)
  • 10
    • 33750196362 scopus 로고    scopus 로고
    • We used the CASINO v244 software based on Monte Carlo simulation of PE path in the matter, www.gel.usherb.ca/casino


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.