Reduction in potential barrier height of AlGaN/GaN heterostructures by SiN passivation

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Onojima, N ^a   Higashiwaki, M ^a   Suda, J ^b   Kimoto, T ^b   Mimura, T ^a,c   Matsui, T ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TWO DIMENSIONAL ELECTRON GAS;

CAPACITANCE VOLTAGE MEASUREMENTS; PASSIVATION METHODS; POLARIZATION EFFECTS; POTENTIAL BARRIER HEIGHT;

HETEROJUNCTIONS;

EID: 33847668329     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472255     Document Type: Article

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