Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ Si Nx nanonetwork

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Xie, Jinqiao ^c   Chevtchenko, Serguei A ^c   Özgür, Ümit ^c   Morko̧, Hadis ^a,b  

^a Virginia Commonwealth University   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LATERAL OVERGROWTH; MATERIAL QUALITY; XRD LINEWIDTHS;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOTECHNOLOGY; SURFACE DEFECTS;

EPILAYERS;

EID: 34547247786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753096     Document Type: Article

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