Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3152-3158

  Sarua, Andrei ^a   Ji, Hangfeng ^a   Hilton, K P ^b   Wallis, D J ^b   Uren, Michael J ^b   Martin, T ^b   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

Field effect transistors (FETs); Gallium compounds; High electron mobility; High electron mobility transistors (HEMTs); Raman spectra; Raman spectroscopy; Temperature measurements; Thermal analysis; Thermal boundary resistance (TBR); Thermal simulations

Indexed keywords

FINITE DIFFERENCE METHOD; HEAT RESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

RAMAN THERMOGRAPHY; THERMAL BOUNDARY RESISTANCE; THERMAL SIMULATION;

FIELD EFFECT TRANSISTORS;

EID: 38149022648     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908874     Document Type: Article

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