Field-plate engineering for HFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2534-2540

  Karmalkar, Shreepad ^a   Shur, Michael S ^b   Simin, Grigory ^c   Khan, M Asif ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c University of South Carolina   (United States)

Author keywords

Analytical modeling; Field plate; Heterostructure field effect trans stor (HFET)

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC INSULATORS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS;

ANALYTICAL MODELING; FIELD-PLATE ENGINEERING; GATE CAPACITANCE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETS);

FIELD EFFECT TRANSISTORS;

EID: 29244446293     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859568     Document Type: Article

References (11)

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