Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1366-1369

  Bouya, M ^a,b   Malbert, N ^a   Labat, N ^a   Carisetti, D ^b   Perdu, P ^d   Clement J C ^b   Lambert, B ^c   Bonnet, M ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b TRT France LATPI   (France)

^c United Monolithic Semiconductors GmbH   (Germany)

^d CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT;

ALGAN/GAN; ALGAN/GAN HEMT; CURRENT COLLAPSE;

GALLIUM NITRIDE;

EID: 50549099216     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.052     Document Type: Article

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