SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 7, 2010, Pages

Unipolar resistive switching behaviors in amorphous lutetium oxide films

(11) Gao, Xu a Xia, Yidong a Xu, Bo a Kong, Jizhou a Guo, Hongxuan b Li, Kui a Li, Haitao a Xu, Hanni a Chen, Kai a Yin, Jiang a Liu, Zhiguo a

a NANJING UNIVERSITY (China)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ENERGY LEVEL; FIRST-PRINCIPLES CALCULATION; HIGH RESISTANCE; LUTETIUM OXIDES; MEMORY CELL; PROGRAMMING SPEED; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING CYCLES; SWITCHING MECHANISM; UNIPOLAR SWITCHING;

AMORPHOUS FILMS; ELECTRON MOBILITY; FLASH MEMORY; GRAIN BOUNDARIES; OXYGEN; OXYGEN VACANCIES; PLATINUM; PULSED LASER DEPOSITION; SWITCHING; SWITCHING SYSTEMS;

OXIDE FILMS;

EID: 77958174233 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3490758 Document Type: Article

Times cited : (19)

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