Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors: Dependence on oxide thickness

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6382-6391

  Lombardo, S ^a   La Magna, A ^a   Spinella, C ^a   Gerardi, C ^b   Crupi, F ^c  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000975529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371701     Document Type: Article

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