Thermal stability of rare-earth based ultrathin Lu2 O3 for high- k dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1203-1206

  Darmawan, P ^a   Lee, P S ^a   Setiawan, Y ^a   Lai, J C ^a   Yang, P ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; PULSED LASER DEPOSITION; RARE EARTH ELEMENTS; SILICON; SUBSTRATES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

ANNEALING TEMPERATURE; LU-BASED SILICATE LAYERS; POSTDEPOSITION ANNEALING;

LUTETIUM COMPOUNDS;

EID: 34547570593     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2749526     Document Type: Article

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