SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 156, Issue 12, 2009, Pages

Filamentary resistive switching localized at cathode interface in NiO thin films

(5) Kim, Kyung Min a Choi, Byung Joon a Song, Seul Ji a Kim, Gun Hwan a Hwang, Cheol Seong a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; ELECTRICAL CONDUCTION; FILAMENT FORMATION; LOCAL HEAT; LOCALIZED HOLES; NIO THIN FILM; OXYGEN IONS; P-TYPE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING CURRENTS; TIO; VOLTAGE SWEEP;

FILAMENTS (LAMP); OXYGEN;

SWITCHING;

EID: 70350732732 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3240201 Document Type: Article

Times cited : (50)

References (16)

1
- 22144448904
- 2 thin films
- DOI 10.1063/1.1968416, 262907
- C. Rhode, B. J. Choi, D. S. Jeong, S. Choi, J. -S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 0003-6951, 86, 262907 (2005). 10.1063/1.1968416 (Pubitemid 40983220)
- (2005) Applied Physics Letters , vol.86 , Issue.26 , pp. 1-3
- Rohde, C.¹ Choi, B.J.² Jeong, D.S.³ Choi, S.⁴ Zhao, J.-S.⁵ Hwang, C.S.⁶

2
- 23944447615
- 2 thin films grown by atomic-layer deposition
- DOI 10.1063/1.2001146, 033715
- B. J. Choi, D. S. Jeong, S. K. Kim, S. Choi, J. H. Oh, C. Rohde, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, J. Appl. Phys. 0021-8979, 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-10
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

3
- 19944434155
- Reproducible resistance switching in polycrystalline NiO films
- DOI 10.1063/1.1831560
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. -S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, Appl. Phys. Lett. 0003-6951, 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
- (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Park, B.H.¹³

4
- 33646885556
- Electrical observations of filamentary conductions for the resistive memory switching in NiO films
- DOI 10.1063/1.2204649
- D. C. Kim, S. Seo, S. E. Ahn, D. -S. Suh, M. J. Lee, B. -H. Park, I. K. Yoo, I. G. Baek, H. -J. Kim, E. K. Yim, Appl. Phys. Lett. 0003-6951, 88, 202102 (2006). 10.1063/1.2204649 (Pubitemid 43781782)
- (2006) Applied Physics Letters , vol.88 , Issue.20 , pp. 202102
- Kim, D.C.¹ Seo, S.² Ahn, S.E.³ Suh, D.-S.⁴ Lee, M.J.⁵ Park, B.-H.⁶ Yoo, I.K.⁷ Baek, I.G.⁸ Kim, H.-J.⁹ Yim, E.K.¹⁰ Lee, J.E.¹¹ Park, S.O.¹² Kim, H.S.¹³ Chung, U.-I.¹⁴ Moon, J.T.¹⁵ Ryu, B.I.¹⁶

5
- 33748513895
- Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
- DOI 10.1063/1.2339032
- K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, Appl. Phys. Lett. 0003-6951, 89, 103509 (2006). 10.1063/1.2339032 (Pubitemid 44359658)
- (2006) Applied Physics Letters , vol.89 , Issue.10 , pp. 103509
- Kinoshita, K.¹ Tamura, T.² Aoki, M.³ Sugiyama, Y.⁴ Tanaka, H.⁵

6
- 33646465419
- 0163-1829 10.1103/PhysRevB.73.193202
- E. Cho, S. Han, H. -S. Ahn, K. -R. Lee, S. K. Kim, and C. S. Hwang, Phys. Rev. B 0163-1829, 73, 193202 (2006). 10.1103/PhysRevB.73.193202
- (2006) Phys. Rev. B , vol.73 , pp. 193202
- Cho, E.¹ Han, S.² Ahn, H.-S.³ Lee, K.-R.⁴ Kim, S.K.⁵ Hwang, C.S.⁶

7
- 42049092820
- 0163-1829 10.1103/PhysRevB.77.134103
- S. Park, H. -S. Ahn, C. -K. Lee, H. Kim, H. Jin, H. -S. Lee, S. Seo, J. Yu, and S. Han, Phys. Rev. B 0163-1829, 77, 134103 (2008). 10.1103/PhysRevB.77. 134103
- (2008) Phys. Rev. B , vol.77 , pp. 134103
- Park, S.¹ Ahn, H.-S.² Lee, C.-K.³ Kim, H.⁴ Jin, H.⁵ Lee, H.-S.⁶ Seo, S.⁷ Yu, J.⁸ Han, S.⁹

8
- 36048964246
- Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films
- DOI 10.1063/1.2749846
- K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang, Appl. Phys. Lett. 0003-6951, 91, 012907 (2007). 10.1063/1.2749846 (Pubitemid 350092117)
- (2007) Applied Physics Letters , vol.91 , Issue.1 , pp. 012907
- Kim, K.M.¹ Choi, B.J.² Shin, Y.C.³ Choi, S.⁴ Hwang, C.S.⁵

9
- 47549085920
- 0003-6951 10.1063/1.2959074
- R. Muenstermann, R. Dittmann, K. Szot, S. Mi, C. -L. Jia, P. Meuffels, and R. Waser, Appl. Phys. Lett. 0003-6951, 93, 023110 (2008). 10.1063/1.2959074
- (2008) Appl. Phys. Lett. , vol.93 , pp. 023110
- Muenstermann, R.¹ Dittmann, R.² Szot, K.³ Mi, S.⁴ Jia, C.-L.⁵ Meuffels, P.⁶ Waser, R.⁷

10
- 44349102407
- Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films
- DOI 10.1063/1.2936087
- I. K. Yoo, B. S. Kang, Y. D. Park, M. J. Lee, and Y. Park, Appl. Phys. Lett. 0003-6951, 92, 202112 (2008). 10.1063/1.2936087 (Pubitemid 351733895)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202112
- Yoo, I.K.¹ Kang, B.S.² Park, Y.D.³ Lee, M.J.⁴ Park, Y.⁵

11
- 3342904138
- 0031-9007 10.1103/PhysRevLett.55.1208
- C. E. Dahmani, M. C. Cadeville, J. M. Sanchez, and J. L. Moran-Lopez, Phys. Rev. Lett. 0031-9007, 55, 1208 (1985). 10.1103/PhysRevLett.55.1208
- (1985) Phys. Rev. Lett. , vol.55 , pp. 1208
- Dahmani, C.E.¹ Cadeville, M.C.² Sanchez, J.M.³ Moran-Lopez, J.L.⁴

12
- 44849088973
- 0003-6951 10.1063/1.2931087
- J. Y. Son and Y. -H. Shina, Appl. Phys. Lett. 0003-6951, 92, 222106 (2008). 10.1063/1.2931087
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222106
- Son, J.Y.¹ Shina, Y.-H.²

13
- 57349121100
- 0003-6951 10.1063/1.3039809
- W. Shen, R. Dittmann, U. Breuer, and R. Waser, Appl. Phys. Lett. 0003-6951, 93, 222102 (2008). 10.1063/1.3039809
- (2008) Appl. Phys. Lett. , vol.93 , pp. 222102
- Shen, W.¹ Dittmann, R.² Breuer, U.³ Waser, R.⁴

14
- 29744470409
- Electrode dependence of resistance switching in polycrystalline NiO films
- DOI 10.1063/1.2150580, 263507
- S. Seo, M. J. Lee, D. C. Kim, S. E. Ahn, B. -H. Park, Y. S. Kim, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, Appl. Phys. Lett. 0003-6951, 87, 263507 (2005). 10.1063/1.2150580 (Pubitemid 43032071)
- (2005) Applied Physics Letters , vol.87 , Issue.26 , pp. 1-3
- Seo, S.¹ Lee, M.J.² Kim, D.C.³ Ahn, S.E.⁴ Park, B.-H.⁵ Kim, Y.S.⁶ Yoo, I.K.⁷ Byun, I.S.⁸ Hwang, I.R.⁹ Kim, S.H.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Lee, J.H.¹³ Jeon, S.H.¹⁴ Hong, S.H.¹⁵ Park, B.H.¹⁶

15
- 65249161894
- 1530-6984 10.1021/nl803387q
- M. -J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S. -E. Ahn, K. H. Kim, C. B. Lee, C. J. Kim, I. -K. Yoo, Nano Lett. 1530-6984, 9, 1476 (2009). 10.1021/nl803387q
- (2009) Nano Lett. , vol.9 , pp. 1476
- Lee, M.-J.¹ Han, S.² Jeon, S.H.³ Park, B.H.⁴ Kang, B.S.⁵ Ahn, S.-E.⁶ Kim, K.H.⁷ Lee, C.B.⁸ Kim, C.J.⁹ Yoo, I.-K.¹⁰

16
- 66449128301
- 1616-301X 10.1002/adfm.200801032
- M. -J. Lee, S. I. Kim, C. B. Lee, H. Yin, S. -E. Ahn, B. S. Kang, K. H. Kim, J. C. Park, C. J. Kim, I. Song, Adv. Funct. Mater. 1616-301X, 19, 1587 (2009). 10.1002/adfm.200801032
- (2009) Adv. Funct. Mater. , vol.19 , pp. 1587
- Lee, M.-J.¹ Kim, S.I.² Lee, C.B.³ Yin, H.⁴ Ahn, S.-E.⁵ Kang, B.S.⁶ Kim, K.H.⁷ Park, J.C.⁸ Kim, C.J.⁹ Song, I.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.