The thermal stability and electrical properties of LaErO3 films as high-k gate dielectrics

Journal of Physics D: Applied Physics

Volumn 41, Issue 23, 2008, Pages

  Gao, Xu ^a   Yin, Jiang ^a   Xia, Yidong ^a   Yin, Kuibo ^a   Gao, Ligang ^a   Guo, Hongxuan ^a   Liu, Zhiguo ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; ERBIUM OXIDE; HIGH-K GATE DIELECTRICS; INTERFACIAL LAYER; MICROSCOPIC IMAGE; PULSED-LASER DEPOSITION TECHNIQUE; SI(1 0 0); THERMAL STABILITY; TRANSMISSION ELECTRON; X- RAY DIFFRACTION; X-RAY PHOTOELECTRONS;

CAPACITANCE MEASUREMENT; DEPOSITION; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRONS; ERBIUM; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT TRANSMISSION; MOS CAPACITORS; OXIDE FILMS; PHOTOIONIZATION; PHOTONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 68349150535     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/23/235105     Document Type: Article

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