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Physical Review Letters

Volumn 90, Issue 16, 2003, Pages

Breakdown transients in ultrathin gate oxides: Transition in the degradation rate

(3) Lombardo, S a Stathis, J H b Linder, B P b

a CNR (Italy)

b IBM RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BAND STRUCTURE; CALCULATIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON; SILICA; THIN FILMS;

DEGRADATION RATE; RELAXATION ENERGY; ULTRATHIN GATE OXIDE; VALENCE BAND;

GATES (TRANSISTOR);

EID: 0037526589 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (56)

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