Stability of hydrogenated amorphous silicon thin film transistors on polyimide substrates

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 578-584

  Kavak, H ^a   Shanks, H ^b  

^a CUKUROVA UNIVERSITY   (Turkey)

^b Iowa State University of Science and Technology   (United States)

Author keywords

Amorphous silicon; Polyimide substrates; Stability; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; FABRICATION; HYDROGENATION; LIQUID CRYSTALS; MICROELECTRONICS; PLASTIC FILMS; POLYIMIDES; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

ACTIVE MATRIX LIQUID CRYSTALLINE DISPLAYS (AMLCD); FIELD EFFECT MOBILITY; POLYIMIDE SUBSTRATE; VACUUM PROCESSING;

THIN FILM TRANSISTORS;

EID: 13644281226     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.002     Document Type: Article

References (21)

1. Constant A, Burns S, Shanks H, Gruber C, Landin A, Schmidt D, et al. Development of thin film transistor based circuits on flexible polyimide substrates. In: Kuo Y, editor. J Electrochemical Society 2nd Symposium Proceedings 94(35), 1994. p. 392-400
2. S.K. Park, Y.H. Kim, J.I. Han, D.G. Moon, and W.K. Kim Electrical and mechanical properties of low temperature evaporated silicon dioxide/polyimide dual layer insulator for plastic based polymer transistor Thin Solid Films 429 2003 231 237
3. A. Sazanov, A. Nathan, and D. Striakhilev Materials optimization for thin film transistors fabricated at low temperature on plastic substrate J Non-Cryst Solids 266-269 2000 1329 1334
4. H. Kavak, C. Gruber, H. Shanks, A. Landin, A. Constant, and S. Burns Thin film transistors on polyimide substrates J Non-Cryst Solids 266-269 2000 1325 1328
5. P.I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner, and J.C. Sturm Amorphous Si TFTs on plastically deformed spherical domes J Non-Cryst Solids 299-302 2002 1355 1359
6. S. Wagner, H. Gleskova, I.C. Cheng, and M. Wu Silicon for thin film transistors Thin Solid Films 430 2003 15 19
7. 2 gate insulator in a-Si:H thin film transistor Mat Res Soc Symp Proc 345 1994 29 34
8. B.S. Sahu, A. Kapoor, P. Srivatsava, O.P. Agnihotri, and S.M. Shiraprasad Study of thermally grown and photo-CVD deposited silicon oxide-silicon nitride stack layers Semicond Sci Technols 18 2003 670 675
9. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J.C. Phillips Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics J Vac Sci Technol B 14 4 1999 1806 1812
10. S.K. Kim, Y.J. Choi, K.S. Cho, and J. Jang Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition J Appl Phys 84 7 1998 4006 4012
11. H.C. Slade, and M.S. Shur Analysis of bias stress on unpassivated hydrogenated amorphous silicon thin film transistors IEEE Trans Electron Dev 45 1998 1548 1553
12. M.J. Powell, C. van Berkel, A.K. Franklin, S.C. Deana, and W.I. Milne Defect pool in amorphous-silicon thin-film transistors Phys Rev B 45 1992 4160 4170
13. B. Stannowski, J.K. Rath, and R.E. Shropp Thin-film transistors deposited by hot-wire chemical vapor deposition Thin Solid Films 430 2003 220 225
14. J.B. Choi, D.C. Yun, Y.I. Park, and J.H. Kim Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150 °C J Non-Cryst Solids 266-269 2000 1315 1319
15. Y.H. Tai, J.W. Tsai, H.C. Chung, and F.C. Su Instability mechanisms for the hydrogenated amorphous silicon thin-film transistors with negative and positive bias stresses on the gate electrodes Appl Phys Lett 67 1995 76 78
16. C. van Berkel, and M.J. Powell Photo-field effect in amorphous silicon thin-film transistors J Appl Phys 60 1986 1521 1527
17. Y.J. Choi, B.C. Lim, I.K. Woo, J.I. Ryo, and J. Jang Low photo-leakage current amorphous silicon thin film transistor with a thin active layer J Non-Cryst Solids 266-269 2000 1299 1303
18. N. Lusting, and J. Kanicki Gate dielectric and contact effect in hydrogenated amorphous silicon nitride thin film transistors J Appl Phys 65 1989 3951 3957
19. H.C. Slade, M.S. Shur, S.C. Deane, and M. Hack Physics of below threshold current distribution in a-Si:H TFTs MRS Symp Proc 424 1997 91 96
20. C.Y. Chen, and J. Kanicki Influence of the density of states and series resistance on the field-effect activation energy in a-Si:H TFT MRS Symp Proc 424 1997 77 83
21. K. Takechi, H. Uchida, and S. Kaneko Mobility improvement mechanism in a-Si:H TFTs with smooth a-Si:H/SiNx interface MRS Symp Proc 258 1992 955 960