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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 426-434

Review on the reliability characterization of plasma-induced damage

(1) Martin, Andreas a

a INFINEON TECHNOLOGIES AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; METAL INSULATOR BOUNDARIES; MOS CAPACITORS; MOS DEVICES; PLASMAS; RELIABILITY; TRANSISTORS;

ANTENNA RATIOS; CHARGING EFFECTS; GATE OXIDES; HIGH - K DIELECTRICS; METAL-INSULATOR-METAL CAPACITORS; METAL-OXIDE SEMICONDUCTORS; PLASMA PROCESSING; PLASMA-INDUCED DAMAGES; PROBLEM AREAS; RELIABILITY CHARACTERIZATIONS; TEST STRUCTURES;

PLASMA DIAGNOSTICS;

EID: 59949083467 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3054356 Document Type: Article

Times cited : (62)

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