Effect of process pressure on atomic layer deposition of Al2 O3

Journal of the Electrochemical Society

Volumn 154, Issue 11, 2007, Pages

  Li, Ming Yen ^a   Chang, Yung Yuan ^a   Wu, Hsiao Che ^a   Huang, Cheng Sung ^a   Chen, Jen Chung ^a   Lue, Jen Lang ^a   Chang, Shieh Ming ^a  

^a ProMOS Technologies Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC LAYER DEPOSITION; OZONE;

PROCESS PRESSURE; TRIMETHYLALUMINUM (TMA);

ALUMINUM COMPOUNDS;

EID: 34848905648     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2778861     Document Type: Article

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