Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1024-1029

  Cheng, Chin Lung ^a   Chang Liao, Kuei Shu ^b   Chang, Hsin Chun ^b   Wang, Tien Ko ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Buffer layer; HfON; HfTaSiON; Interface trap density; Metal oxide semiconductor; Stress induced leakage current (SILC); X ray photoelectron spectroscopy (XPS)

Indexed keywords

HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICES; SILICON; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFER LAYERS; HFTASION; INTERFACE TRAP DENSITY; STRESS-INDUCED LEAKAGE CURRENT (SILC); X-RAY PHOTOELECTRON SPECTROSCOPY (XPS);

MOS DEVICES;

EID: 33745762793     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.043     Document Type: Article

References (24)

1. Wilk G.D., Wallace R.M., and Anthony J.M. J Appl Phys 89 (2001) 5243-5275
2. Yamamoto K., Hayashi S., Kubota M., and Niwa M. Appl Phys Lett 81 (2002) 2053-2055
3. Cheng C.L., Chang-Liao K.S., Huang C.H., and Wang T.K. Appl Phys Lett 86 (2005) 212902-212903
4. Kang C.S., Cho H.-J., Choi R., Kim Y.H., Kang C.Y., Rhee S.J., et al. IEEE Trans Electron Dev 51 (2004) 220-227
5. Wang X., Liu J., Zhu F., Yamada N., and Kwong D.L. IEEE Trans Electron Dev 51 (2004) 1798-1804
6. Djezzar B. Symp Nucl Sci (2001) 234-239
7. Fleetwood D.M. IEEE Trans Nucl Sci 43 (1996) 779-786
8. Yu X., Zhu C., Li M.F., Chin A., Yu M.B., Du A.Y., et al. IEEE Electron Dev Lett 25 (2004) 501-503
9. Paskaleva A., Bauer A.J., Lemberger M., and Zurcher S. J Appl Phys 95 (2004) 5583-5590
10. Cheng C.L., Chang-Liao K.S., Huang C.H., and Wang T.K. Appl Phys Lett 85 (2004) 4723-4725
11. Mudanai S., Li F., Samavedam S.B., Tobin P.J., Kang C.S., Nieh R., et al. IEEE Electron Dev Lett 23 (2002) 728-730
12. Schroder D.K. Semiconductor material and device characterization (1998), John Wiley & Sons p. 337-338
13. Hahn P.O., and Henzler M. J Vac Sci Technol A 2 (1984) 574-583
14. Yamanka T., Feng S., Lin H., Snyder J., and Helms C.R. IEEE Electron Dev Lett 17 (1996) 178-180
15. Chim W.K., Ng T.H., Koh B.H., Choi W.K., Zheng J.X., Tung C.H., et al. J Appl Phys 93 (2003) 4788-4793
16. Fujioka H, Kamohara S, King YC and Yang K. QMCV simulator. Available from http://www-device.eecs.berkeley.edu/qmcv/index.shtml.
17. Kang J.F., Yu H.Y., Ren C., Wang X.P., Li M.-F., Chan D.S.H., et al. IEEE Electron Dev Lett 26 (2005) 237-239
18. Conley Jr. J.F., Ono Y., and Tweet D.J. Appl Phys Lett 84 (2004) 1913-1915
19. Chiang C.K., Wallace W.E., Lynn G.W., Feiler D., and Xia W. Appl Phys Lett 76 (2000) 430-432
20. Hubbard K.J., and Schlom D.G. J Mater Res 15 (1996) 2757-2763
21. Nicollian E.H., and Brews J.R. MOS (metal oxide semiconductor) physics and technoslogy (1982), John Wiley & Sons p. 185-187
22. Maserjian J., and Zamani N. J Vac Sci Technol 20 (1982) 743-746
23. Rofan R., and Hu C. IEEE Electron Dev Lett 12 (1991) 632-634
24. Conley Jr. J.F., Ono Y., Tweet D.J., Zhuang W., and Solanki R. J Appl Phys 93 (2003) 712-718