Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1767-1770

  Samanta, Piyas ^a,b   Cheng, Chin Lung ^c   Lee, Yao Jen ^d   Chan, Mansun ^b  

^a VIDYASAGAR COLLEGE   (India)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

HfAlO SiO2 stacked dielectric; Metal oxide semiconductor; Positive charge generation; Reliability; Stress induced positive charge

Indexed keywords

CAPACITOR STRUCTURES; DIELECTRIC STACK; ELECTRICAL STRESS; EQUIVALENT OXIDE THICKNESS; HAFNIUM ALUMINATE; HFALO/SIO2 STACKED DIELECTRIC; HOLE INJECTION; MEASUREMENT RESULTS; METAL-OXIDE-SEMICONDUCTOR; NEGATIVE BIAS; POSITIVE CHARGE GENERATION; POSITIVE CHARGES; PROTON TRANSPORT; SILICON DIOXIDE; STRESS VOLTAGES; STRESS-INDUCED POSITIVE CHARGE; VALENCE-BAND HOLES;

DIELECTRIC DEVICES; HAFNIUM; MOSFET DEVICES; SILICA; SILICON OXIDES; TANTALUM COMPOUNDS;

ELECTROMAGNETIC INDUCTION;

EID: 67349112107     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.002     Document Type: Article

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