Thermal stability of Hfx TayN metal gate electrodes for advanced MOS devices

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 148-150

  Cheng, Chin Lung ^a   Chang Liao, Kuei Shu ^b   Wang, Tzu Chen ^b   Wang, Tien Ko ^b   Wang, Howard Chih Hao ^c  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Hfx TayN; Metal gate; Thermal stability; Work function

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; ELECTRIC PROPERTIES; ELECTRODES; HAFNIUM; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

DEFECT GENERATION RATE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; INTERFACE TRAP DENSITY; METAL GATE ELECTRODES; WORK FUNCTION;

MOS DEVICES;

EID: 33644625154     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.863563     Document Type: Article

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