On the electrical stress-induced oxide-trapped charges in thin Hf O2 Si O2 gate dielectric stack

Applied Physics Letters

Volumn 91, Issue 11, 2007, Pages

  Samanta, Piyas ^a,c   Zhu, Chunxiang ^b   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c VIDYASAGAR COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; HAFNIUM COMPOUNDS; HOLE TRAPS; PROTON TRANSFER; SILICA; STRESS MEASUREMENT;

CHARGE RELAXATION; GATE STACK; PROTON-INDUCED DEFECTS;

GATE DIELECTRICS;

EID: 34548691643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2783967     Document Type: Article

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