Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Sivasubramani, P ^a   Kim, J ^a   Kim, M J ^a   Gnade, B E ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACK FABRICATION PROCESS; LANTHANUM ALUMINUM OXYNITRIDE (LAALON); SI (100);

ALUMINA; ANNEALING; DIELECTRIC MATERIALS; LANTHANUM; MICROSTRUCTURE; NITROGEN; SILICON;

THERMODYNAMIC STABILITY;

EID: 33750062916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361170     Document Type: Article

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