Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4053-4055

  Travlos, A ^a   Boukos, N ^a   Apostolopoulos, G ^a   Dimoulas, A ^a  

^a INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ENERGY GAP; MOLECULAR BEAM EPITAXY; OXIDES; SILICON; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SUPERSTRUCTURE;

YTTRIUM COMPOUNDS;

EID: 0038505324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581985     Document Type: Article

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