Charge trapping related degradation of thin HfAlO/SiO2 gate dielectric stack during constant-voltage stress

Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

  Samanta, Piyas ^a   Cheng, Chin Lung ^b   Lee, Yao Jen ^c  

^a VIDYASAGAR COLLEGE   (India)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE LIFETIME; DIELECTRIC DEGRADATION; EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC STACKS; GATE VOLTAGES; LOGIC APPLICATIONS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POSITIVE CHARGES; STRESS VOLTAGES; STRESS-INDUCED LEAKAGE CURRENT; SURFACE STATE; THRESHOLD VOLTAGE DEGRADATION; TRAPPED CHARGE; VOLTAGE STRESS;

CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYDROGEN; MOS CAPACITORS; MOS DEVICES; POLYPEPTIDES; THRESHOLD VOLTAGE;

DEGRADATION;

EID: 67650588701     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3148203     Document Type: Article

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