Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 63-69

  Cheng, Chin Lung ^a   Lu, Chun Yuan ^b   Chang Liao, Kuei Shu ^b   Huang, Ching Hung ^b   Wang, Sheng Hung ^b   Wang, Tien Ko ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Defect generation rate; Denuded zone; Electrical characteristic; HfO zNy; Interface trap density; Interstitial oxygen defects; MOS; SiOxNy; Stress induced leakage current (SILC)

Indexed keywords

ANNEALING; DEFECTS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; HYDROGEN; LEAKAGE CURRENTS; SILICA; SILICON; SURFACE ROUGHNESS;

DEFECT GENERATION RATE; DENUDED ZONE; ELECTRICAL CHARACTERISTICS; INTERFACE TRAP DENSITY; INTERSTITIAL OXYGEN DEFECTS; SCHOTTKY EMISSION; STRESS-INDUCED LEAKAGE CURRENT (SILC);

MOS DEVICES;

EID: 33746536121     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860660     Document Type: Article

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