Temperature Effects on Characteristics of High-k Gate Dielectrics With Metal Gates

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 4, 2008, Pages 689-693

  Rahim, Nilufa ^a   Misra, Durgamadhab ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

High k dielectric; stress induced leakage current (SILC); time dependent dielectric breakdown (TDDB); Weibull distribution

Indexed keywords

EID: 85008047757     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2008.2005675     Document Type: Article

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