Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-κ dielectrics and Si channel

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 430-433

  Chang, S Z ^a,b   Yu, H Y ^b,c   Adelmann, C ^b   Delabie, A ^b   Wang, X P ^b   Van Elshocht, S ^b   Akheyar, A ^b   Nyns, L ^b   Swerts, J ^d   Aoulaiche, M ^b,e   Kerner, C ^b   Absil, P ^b   Hoffmann, T Y ^b   Biesemans, S ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b IMEC   (Belgium)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d ASM BELGIUM   (Belgium)

^e Katholieke Universiteit Leuven   (Belgium)

Author keywords

HfLaO; La2O3 SiOx interfacial layer (IL); Low VT n MOSFETs; Ta2C

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

GATE LEAKAGE; INTERFACIAL LAYER; METAL-GATED N-MOSFETS; SILICON CHANNEL;

MOSFET DEVICES;

EID: 43549083257     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919780     Document Type: Article

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