Hafnium titanate bilayer structure multimetal dielectric nMOSCAPs

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 225-227

  Rhee, Se Jong ^a   Zhu, Feng ^a   Kim, Hyoung Sub ^a   Choi, Chang Hwan ^a   Kang, Chang Yong ^a   Zhang, Manhong ^a   Lee, Tackhwi ^a   Ok, Injo ^a   Krishnan, Siddarth A ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Bilayer; Equivalent oxide thickness (EOT); Fixed charge; Flatband voltage; HfO2; Leakage current density; TiO2

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DIELECTRIC DEVICES; HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; PERMITTIVITY; TITANIUM DIOXIDE;

BILAYER; BILAYER MULTIMETAL OXIDE DIELECTRIC; EQUIVALENT OXIDE THICKNESS (EOT); FIXED CHARGE; HAFNIUM TITANATE BILAYER; LEAKAGE CURRENT DENSITY; ULTRATHIN EQUIVALENT OXIDE;

MOS DEVICES;

EID: 33645650913     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.871187     Document Type: Article

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