Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Cheng, Chin Lung ^a   Liu, Chien Wei ^b   Jeng, Jin Tsong ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICES; TITANIUM ALLOYS; TUNING;

EXTRINSIC STATES; GATE ELECTRODES; POST-METAL-ANNEALING (PMA); WORK FUNCTION (WF) TUNING;

GATES (TRANSISTOR);

EID: 33846981134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472531     Document Type: Article

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