Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 54, Issue 10, 2010, Pages 1098-1104

  Meyer, David J ^a   Bass, Robert ^a   Katzer, D Scott ^a   Deen, David A ^a   Binari, Steven C ^a   Daniels, Kevin M ^a   Eddy Jr , Charles R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Breakdown; Gate leakage current; Insulated gate; MIS; Passivation; Pulsed I V

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HEMTS; DEVICE ACCESS; FABRICATION TECHNIQUE; GATE INSULATOR; GATE LEAKAGE CURRENT; GATE LENGTH; GATE METAL LAYERS; GATE METALS; INSULATED GATE; METAL-INSULATOR-SEMICONDUCTORS; ORDERS OF MAGNITUDE; OUTPUT CONDUCTANCE; PHOTORESIST PATTERNS; PROOF OF CONCEPT; REVERSE-BIAS; SCHOTTKY GATE; SELF ALIGNMENT; SELF-ALIGNED; SMALL SIGNAL; SUBMICRON;

ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; PHOTORESISTS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TRANSISTORS;

PASSIVATION;

EID: 77955418693     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.024     Document Type: Article

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