Design and analysis of ultra wideband GaN dual-gate HEMT low-noise amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 12, 2009, Pages 3270-3277

  Shih, Shih En ^a   Deal, William R ^a   Yamauchi, Derrick M ^a   Sutton, William E ^a   Luo, Wen Ben ^a   Chen, Yaochung ^a   Smorchkova, Ioulia P ^a   Heying, Benjamin ^a   Wojtowicz, Michael ^a   Siddiqui, Mansoor ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Broadband amplifier; Dual gate; GaN; High electron mobility transistor (HEMT); Low noise amplifier (LNA)

Indexed keywords

ALGAN/GAN HEMTS; COPLANAR WAVEGUIDE TRANSMISSION LINE; DESIGN AND ANALYSIS; DIFFERENT FREQUENCY; FLAT-GAIN; GAN; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY; LOW FREQUENCY; MICROSTRIPES; MINIMUM NOISE FIGURE; RESISTIVE FEEDBACK; SINGLE STAGE; ULTRAWIDE BANDWIDTH;

AUDIO FREQUENCY AMPLIFIERS; COPLANAR WAVEGUIDES; ELECTRON MOBILITY; FEEDBACK AMPLIFIERS; FREQUENCY BANDS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LOW NOISE AMPLIFIERS; NOISE FIGURE;

BROADBAND AMPLIFIERS;

EID: 73049089291     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2034416     Document Type: Article

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