Pre-passivation plasma surface treatment effects on critical device electrical parameters of AlGaN/GaN HEMTs

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Volumn , Issue , 2008, Pages

  Meyer, David J ^a   Flemish, Joseph R ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

HEMT; Passivation; Plasma; Pulsed I V

Indexed keywords

ALGAN/GAN HEMTS; ELECTRICAL PARAMETER; GATE-LEAKAGE CURRENT; IV CHARACTERISTICS; MANUFACTURABILITY; PLASMA SURFACE TREATMENT; PULSED I-V; SURFACE PLASMA TREATMENT;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; PLASMAS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

SURFACE TREATMENT;

EID: 84887440221     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. V. Kumar, et al, Field-plated 0.25 um gate-length AlGaN/GaN HEMTs with varying field-plate length, IEEE Trans. Electron Devices 53, 1477 (2006).
2. Y. F. Wu, et al, 30 W/mm GaN HEMTs by Field Plate Optimization, IEEE Electron Device Lett. 25, 117 (2004).
3. C. Lee, et al, Effects of AIGaN/GaN HEMT structure on RF reliability, Electronics Lett. 41, 155 (2005).
4. Y. Sun, et al, Large-signal performance of deep submicrometer AlGaN/AlN/GaN HEMTs with a field-modulating plate, IEEE Trans. Electron Devices 52, 1689 (2005).
5. L. Shen, et al, Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment, IEEE Electron Device Lett. 27, 214 (2006).
6. 2 plasma effects on silicon nitride passivation of AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 89, 223523 (2006).
7. D. J. Meyer, et al, Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs, CS ManTech 2007 Digest, pp. 305-307
8. R. Vetury, et al, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Trans. Electron Devices 48, 560 (2001).
9. x passivation and UV illumination, IEEE Trans. Electron Devices 50, 886 (2003).
10. T. Hashizume, et al, Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes, Appl. Surf. Sci. 234, 387 (2004).