Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3819-3821

  Storm, D F ^a   Katzer, D S ^a   Binari, S C ^a   Glaser, E R ^a   Shanabrook, B V ^a   Roussos, J A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBSTRATES;

DEIONIZED WATER (DIW);

GALLIUM NITRIDE;

EID: 0037065069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1522133     Document Type: Article

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