Structure optimization of field-plate AlGaN/GaN HEMTs

Microelectronics Journal

Volumn 38, Issue 2 SPEC. ISS., 2007, Pages 272-274

  Luo, Weijun ^a,b   Wei, Ke ^b   Chen, Xiaojuan ^b   Li, Chengzhan ^b   Liu, Xinyu ^b   Wang, Xiaoliang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Field plate; GaN; HEMT; Power; Small signal

Indexed keywords

MATHEMATICAL MODELS; MICROWAVE POWER TRANSMISSION; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

FIELD PLATES; GATE DRAIN SPACING; PARASITIC EFFECTS; SIGNAL PARAMETERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846611061     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.09.016     Document Type: Article

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