Dramatic Improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Moser, N ^a   Fitch, R C ^a   Crespo, A ^a   Gillespie, J K ^a   Jessen, G H ^a   Via, G D ^a   Luo, B ^b   Ren, F ^b   Gila, B P ^c   Abernathy, C R ^c   Pearton, S J ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Department of Chemical Engineering ^*  (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DOPING (ADDITIVES); GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; OZONE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

BREAKDOWN VOLTAGES; FIELD-EMISSION GUNS; GATE VOLTAGES; UV-OZONE TREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 19944420824     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1803561     Document Type: Article

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