ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC

Electronics Letters

Volumn 43, Issue 2, 2007, Pages 127-128

  Kim, D H ^a   Kumar, V ^a   Chen, G ^a   Dabiran, A M ^b   Wowchak, A M ^b   Osinsky, A ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DEPOSITION; GALLIUM NITRIDE; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

ATOMIC LAYER DEPOSITION; GATELENGTH DEVICES; PASSIVATION LAYERS; UNITY GAIN CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846579670     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20073550     Document Type: Article

References (7)

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2. Nguyen, N.X.: et al. ' High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE ', Electron. Lett., 2000, 36, p. 468-469 10.1049/el:20000352 0013-5194
3. T GHz and low microwave noise ', IEEE Trans. Electron Devices, 2001, 48, p. 586-590 0018-9383
4. Green, B.M.: et al. ' The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs ', IEEE Electron Device Lett., 2000, 21, p. 268-270 10.1109/55.843146 0741-3106
5. 3 as gate dielectric ', Appl. Phys. Lett., 2005, 86, p. 063501 10.1063/1.1861122 0003-6951
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7. Kumar, V.: et al. ' Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN ', J. Appl Phys., 2002, 92, p. 1712-1714 10.1063/1.1491584 0021-8979