Resonant tunnelling features in quantum dots

Nanotechnology

Volumn 21, Issue 27, 2010, Pages

  Escott, C C ^a,b   Zwanenburg, F A ^a   Morello, A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Sapphicon Semiconductor   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRINSIC EFFECTS; INTRINSIC PROPERTY; OPERATING CONDITION; PRACTICAL METHOD; QUANTUM DOT; QUANTUM-INFORMATION PROCESSING; RESONANT TUNNELLING; SINGLE DONOR; STRONG COUPLING; SYSTEMATIC REVIEW; TRANSPORT SPECTROSCOPY;

DATA PROCESSING; QUANTUM OPTICS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM CHEMISTRY;

EID: 77954026131     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/27/274018     Document Type: Article

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