Single-donor ionization energies in a nanoscale CMOS channel

Nature Nanotechnology

Volumn 5, Issue 2, 2010, Pages 133-137

  Pierre, M ^a   Wacquez, R ^a   Jehl, X ^a   Sanquer, M ^a   Vinet, M ^b   Cueto, O ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; FIELD EFFECT TRANSISTORS; IONIZATION; MICROELECTRONICS;

LARGE CURRENT; LOW TEMPERATURES; MICROELECTRONICS INDUSTRY; MICROELECTRONICS PROCESS; NANO-SCALE CMOS; RANDOM FLUCTUATION; SHORT CHANNELS; TRANSISTOR PERFORMANCE;

CMOS INTEGRATED CIRCUITS;

ARSENIC DERIVATIVE; NANOMATERIAL; OXIDE; SILICON; SILICON DIOXIDE;

ARTICLE; CONDUCTANCE; ELECTRONICS; FIELD EFFECT TRANSISTOR; IONIZATION; MONTE CARLO METHOD; PRIORITY JOURNAL; ROOM TEMPERATURE;

EID: 76649142041     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.373     Document Type: Article

References (24)

1. Kuhn, K. et al. Managing process variation in Intels 45 nm CMOS technology. Intel Technol. J. 12, 93-109 (2008).
2. Schofield, S. R. et al. Atomically precise placement of single dopants in Si. Phys. Rev. Lett. 91, 136104 (2003).
3. Rueß, F. J. et al. Realization of atomically controlled dopant devices in silicon. Small 3, 563-567 (2007).
4. Zhong, Z. et al. Coherent single charge transport in molecular-scale silicon nanowires. Nano Lett. 5, 1143-1146 (2005).
5. Ono, Y. et al. Conductance modulation by individual acceptors in Si nanoscale field-effect transistors. Appl. Phys. Lett. 90, 102106 (2007).
6. Khalafalla, M. A. H. et al. Identification of single and coupled acceptors in silicon nano-field-effect transistors. Appl. Phys. Lett. 91, 263513 (2007).
7. Khalafalla, M. A. H. et al. Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors. Appl. Phys. Lett. 94, 223501 (2009).
8. Lansbergen, G. et al. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET. Nature Phys. 4, 656-661 (2008).
9. Diarra, M. et al. Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement. Phys. Rev. B 75, 045301 (2007).
10. Bjork, M. T. et al. Donor deactivation in silicon nanostructures. Nature Nanotech. 4, 103-107 (2009).
11. Bending, S. J. & Beasley, M. R. Transport processes via localized states in thin a-Si tunnel barriers. Phys. Rev. Lett. 55, 324-327 (1985).
12. Fowler, A. B. et al. Observation of resonant tunneling in silicon inversion layers. Phys. Rev. Lett. 57, 138-141 (1986).
13. Geim, A. K. et al. Resonant tunneling through donor molecules. Phys. Rev. B 50, 8074-8077 (1994).
14. Savchenko, A. K. et al. Resonant tunneling through two impurities in disordered barriers. Phys. Rev. B 52, 17021-17024 (1995).
15. Calvet, L. et al. Excited-state spectroscopy of single Pt atoms in Si. Phys. Rev. B 78, 195309 (2008).
16. Kuznetsov, K. et al. Resonant tunneling spectroscopy of interacting localized states: observation of the correlated current through two impurities. Phys. Rev. B 56, 15533-15536 (1997).
17. Newman, P. F. & Holcomb, D. F. Metal-insulator transition in Si:As. Phys. Rev. B 28, 638-640 (1983).
18. Kohn, W. & Luttinger, J. M. Theory of donor states in silicon. Phys. Rev. 98, 915-922 (1955).
19. Schmidt, T. et al. Observation of the local structure of Landau bands in a disordered conductor. Phys. Rev. Lett. 78, 1540-1543 (1997).
20. Koenemann, J. et al. Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. Phys. Rev. B 64, 155314 (2001).
21. Niquet, Y. M. et al. Electronic structure of semiconductor nanowires. Phys. Rev. B 73, 165319 (2006).
22. Sanquer, M. et al. Coulomb blockade in low-mobility nanometer size MOSFETs. Phys. Rev. B 61, 7249-7252 (2000).
23. De Franceschi, S. et al. Electron cotunneling in a semiconductor quantum dot. Phys. Rev. Lett. 86, 878-881 (2001).
24. Sellier, H. et al. Transport spectroscopy of a single dopant in a gated silicon nanowire. Phys. Rev. Lett. 97, 206805 (2006).