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Volumn 86, Issue 5, 2001, Pages 878-881

Electron cotunneling in a semiconductor quantum dot

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FERMI LEVEL; GROUND STATE; SCANNING ELECTRON MICROSCOPY;

EID: 0035134485     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.878     Document Type: Article
Times cited : (255)

References (22)
  • 1
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    • Mesoscopic Electron Transport, edited by L. L. Sohn, L. P. Kouwenhoven, and G. Schön, Ser. E, Kluwer, Dordrecht
    • L. P. Kouwenhoven, C. M. Marcus, P. L. McEuen, S. Tarucha, R. M. Westervelt, and N. S. Wingreen, in Mesoscopic Electron Transport, edited by L. L. Sohn, L. P. Kouwenhoven, and G. Schön, NATO ASI, Ser. E, Vol. 345 (Kluwer, Dordrecht, 1997), pp. 105-214.
    • (1997) NATO ASI , vol.345 , pp. 105-214
    • Kouwenhoven, L.P.1    Marcus, C.M.2    McEuen, P.L.3    Tarucha, S.4    Westervelt, R.M.5    Wingreen, N.S.6
  • 3
    • 0032495519 scopus 로고    scopus 로고
    • D. Goldhaber-Gordon et al. Nature (London) 391, 156 (1998); S. M. Cronenwett et al. Science 281, 540 (1998); J. Schmid et al., Physica (Amsterdam) 256B-258B, 182 (1998).
    • (1998) Nature (London) , vol.391 , pp. 156
    • Goldhaber-Gordon, D.1
  • 4
    • 0032563237 scopus 로고    scopus 로고
    • D. Goldhaber-Gordon et al. Nature (London) 391, 156 (1998); S. M. Cronenwett et al. Science 281, 540 (1998); J. Schmid et al., Physica (Amsterdam) 256B-258B, 182 (1998).
    • (1998) Science , vol.281 , pp. 540
    • Cronenwett, S.M.1
  • 5
    • 0345998660 scopus 로고    scopus 로고
    • (Amsterdam) B
    • D. Goldhaber-Gordon et al. Nature (London) 391, 156 (1998); S. M. Cronenwett et al. Science 281, 540 (1998); J. Schmid et al., Physica (Amsterdam) 256B-258B, 182 (1998).
    • (1998) Physica , vol.256-258 B , pp. 182
    • Schmid, J.1
  • 13
    • 0343747251 scopus 로고    scopus 로고
    • note
    • In our definition Δ(N) is strictly positive. It reduces to the single-particle level spacing for noninteracting electrons [for instance, in the case of N = 1 and N = 2, Δ(N) is the spacing between the first two single-particle levels].
  • 17
    • 0343747250 scopus 로고    scopus 로고
    • note
    • The top contact is obtained by deposition of Au/Ge and annealing at 400 °C for 30 s. This thermal treatment is gentle enough to prevent the formation of defects near the dot, but does not allow the complete suppression of the native Schottky barrier. The residual barrier leads to electronic confinement and corresponding charging effects in the GaAs pillar.
  • 18
    • 0342876519 scopus 로고    scopus 로고
    • note
    • g axis.
  • 20
    • 0032582710 scopus 로고    scopus 로고
    • T. Fujisawa et al., Science 282, 932 (1998).
    • (1998) Science , vol.282 , pp. 932
    • Fujisawa, T.1
  • 21
    • 0343747247 scopus 로고    scopus 로고
    • note
    • sd).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.