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Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

Observation of the single-electron regime in a highly tunable silicon quantum dot

(7) Lim, W H a Zwanenburg, F A a Huebl, H a,c Mottonen M a,b Chan, K W a Morello, A a Dzurak, A S a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b AALTO UNIVERSITY (Finland)

c WALTHER MEISSNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; DOT OCCUPANCY; ELECTRON DENSITIES; ELECTRON RESERVOIR; ELECTRONIC TRANSPORT MEASUREMENTS; ENERGY LEVEL; GATE CONTROL; LOW TEMPERATURES; MAGNETOSPECTROSCOPY; QUANTUM DOT; SINGLE ELECTRON; SINGLE-ELECTRON LEVELS;

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS;

ELECTRONS;

EID: 77952855963 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272858 Document Type: Article

Times cited : (103)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.