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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Well-width dependence of valley splitting in Si/SiGe quantum wells

(6) Sasaki, Kohei a Masutomi, Ryuichi a Toyama, Kiyohiko a Sawano, Kentarou b Shiraki, Yasuhiro b Okamoto, Tohru a

a UNIVERSITY OF TOKYO (Japan)

b TOKYO CITY UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LANDAU LEVEL FILLING FACTORS; LONGITUDINAL RESISTIVITY; QUANTUM WELL; SHUBNIKOV-DE HAAS OSCILLATIONS; SI/SIGE; SINGLE QUANTUM WELL; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL ELECTRON SYSTEM; VALLEY SPLITTING; WELL WIDTH; ZEEMAN SPLITTINGS;

LANDFORMS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 71949115826 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3270539 Document Type: Article

Times cited : (13)

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