Valley splitting control in SiO2/Si/SiO2 quantum wells in the quantum Hall regime

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 16, 2004, Pages

  Takashina, K ^a   Fujiwara, A ^a   Horiguchi, S ^a,c   Takahashi, Y ^a   Hirayama, Y ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c AKITA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; ATOMIC PARTICLE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ENERGY; LOW TEMPERATURE; MAGNETISM; MOLECULAR DYNAMICS; QUANTUM MECHANICS;

EID: 42749106185     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.161304     Document Type: Article

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