Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures

Surface Science

Volumn 361-362, Issue , 1996, Pages 542-546

  Weitz, P ^a   Haug, R J ^a   Von Klitzing, K ^a   Schaffler F ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

Electrical transport; Electrical transport measurements; Hall effect; Heterojunctions; Quantum effects; Semiconductor semiconductor heterojunctions; Silicon germanium

Indexed keywords

ACTIVATION ENERGY; ELECTRIC RESISTANCE; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELDS; MAGNETIC VARIABLES MEASUREMENT; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

COINCIDENCE METHOD; ELECTRON MOBILITY; FILLING FACTOR; LEVEL CROSSINGS; SEMICONDUCTOR SEMICONDUCTOR HETEROJUNCTIONS; SPIN SPLITTING; TILTING ANGLES; VALLEY SPLITTING;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030194748     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00465-7     Document Type: Article

References (9)

1. D. Többen, F. Schäffler, A. Zrenner and G. Abstreiter, Phys. Rev. B 46 (1992) 4344.
2. D. Monroe, Y.H. Xie, E.A. Fitzgerald and P.J. Silverman Phys. Rev. B 46 (1992) 7935.
3. F.F. Fang, Surf. Sci. 305 (1994) 301.
4. F. Schäffler, Solid State Electron. 37 (1994) 765.
5. K. Ismail, F.K. LeGoues, K.L. Saenger, M. Arafa, J.O. Chu, P.M. Mooney and B.S. Meyerson, Phys. Rev. Lett. 73 (1994) 3447.
6. F.F. Fang and P.J. Stiles, Phys. Rev. 174 (1968) 823.
7. T. Ando, A.B. Fowler and F. Stern, Rev. Mod. Phys. 54 (1982) 437.
8. F. Schäffler, D. Többen, H.-J. Herzog, G. Abstreiter and B. Holländer, Semicond. Sci. Technol. 7 (1992) 260.
9. P. Weitz, R.J. Haug, K. von Klitzing and F. Schäffler, to be published.