Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon

Nano Letters

Volumn 9, Issue 2, 2009, Pages 707-710

  Fuhrer, A ^a   Fuchsle M ^a   Reusch, T C G ^a   Weber, B ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; INTERFACES (MATERIALS); METALS; MOS DEVICES; MOSFET DEVICES; NANOCRYSTALS; OXIDE SEMICONDUCTORS; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SILICON; SURFACE DEFECTS;

ATOMIC SCALE; CHANNEL LENGTH; DIRECTED SELF-ASSEMBLY; DOPING PROFILES; ELECTRONICS DEVICES; IN-PLANE GATES; INDIVIDUAL COMPONENTS; METALOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFETS); NANOSCALE CONTROL; SCANNING TUNNELLING MICROSCOPES;

SEMICONDUCTOR DOPING;

EID: 65249138817     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803196f     Document Type: Article

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