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Volumn 10, Issue 1, 2010, Pages 11-15

Transport Spectroscopy of single phosphorus donors in a silicon nanoscale transistor

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; CHARGING ENERGIES; ELECTRON STATE; FIELD-EFFECT; G FACTORS; KEY PARAMETERS; NANO SCALE; NANOSCALE TRANSISTORS; PHOSPHORUS DONOR; POTENTIAL APPLICATIONS; SPIN-DOWN; SPIN-UP ELECTRONS; TRANSPORT SPECTROSCOPY;

EID: 74849127703     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901635j     Document Type: Article
Times cited : (118)

References (39)
  • 1
    • 0032516155 scopus 로고    scopus 로고
    • Kane, B. Nature 1998, 393, 133.
    • (1998) Nature , vol.393 , pp. 133
    • Kane, B.1
  • 19
    • 74849100660 scopus 로고    scopus 로고
    • Access date: August 12
    • Topsil high-purity silicon (HPS) wafers wereused[http://www.topsil. com]. Access date: August 12, 2009.
    • (2009)
  • 21
    • 74849088080 scopus 로고    scopus 로고
    • Ph.D. Thesis, Delft University of Technology, Delft, The Netherlands
    • Heij, P. C. Ph.D. Thesis, Delft University of Technology, Delft, The Netherlands, 2001; pp 14-16.
    • (2001) , pp. 14-16
    • Heij, P.C.1
  • 23
    • 74849091040 scopus 로고    scopus 로고
    • Explicitly, for n = 3, we find P(0) = 0.04, P(1) = 0.14, P(2) = 0.23, P(3) = 0.24, P(4) = 0.16, P(5) = 0.10.
    • Explicitly, for n = 3, we find P(0) = 0.04, P(1) = 0.14, P(2) = 0.23, P(3) = 0.24, P(4) = 0.16, P(5) = 0.10.
  • 24
    • 74849124036 scopus 로고    scopus 로고
    • This treatment neglects the mutual charging effects between the donor and other localized charges but should yield a good estimate here.
    • This treatment neglects the mutual charging effects between the donor and other localized charges but should yield a good estimate here.
  • 27
    • 0026255002 scopus 로고
    • The software used to extract coupling capacitances is FASTCAP
    • Nabors, K.; White, J. IEEE Trans. Comput.-Aided Des. 1991, 10, 1447. The software used to extract coupling capacitances is FASTCAP.
    • (1991) IEEE Trans. Comput.-Aided Des. , vol.10 , pp. 1447
    • Nabors, K.1    White, J.2
  • 28
    • 74849083750 scopus 로고    scopus 로고
    • Stopping and range of ions in matter (SRIM) software was used to determine nominal phosphorous donor depth into silicon
    • Stopping and range of ions in matter (SRIM) software was used to determine nominal phosphorous donor depth into silicon.
  • 34
    • 74849128611 scopus 로고    scopus 로고
    • When the resistances of the tunnel barriers are very high, any further widening of one of the barriers - due to the donor being off-center - would make the tunnel current immeasurably small.
    • When the resistances of the tunnel barriers are very high, any further widening of one of the barriers - due to the donor being off-center - would make the tunnel current immeasurably small.
  • 37
    • 74849102664 scopus 로고    scopus 로고
    • A detailed study of the mutual charging effects will be published elsewhere
    • A detailed study of the mutual charging effects will be published elsewhere.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.