Identification of single and coupled acceptors in silicon nano-field-effect transistors

Applied Physics Letters

Volumn 91, Issue 26, 2007, Pages

  Khalafalla, M A H ^a   Ono, Y ^a   Nishiguchi, K ^a   Fujiwara, A ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; GATE DIELECTRICS; SEMICONDUCTING BORON; SILICON ON INSULATOR TECHNOLOGY;

ACCEPTOR-TO-GATE CAPACITANCES; BACK GATE VOLTAGES; CAPACITIVE COUPLING; COUPLED ACCEPTORS;

FIELD EFFECT TRANSISTORS;

EID: 37549022216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2824579     Document Type: Article

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