Controllable valley splitting in silicon quantum devices

Nature Physics

Volumn 3, Issue 1, 2007, Pages 41-45

  Goswami, Srijit ^a   Slinker, K A ^a   Friesen, Mark ^a   McGuire, L M ^a   Truitt, J L ^a   Tahan, Charles ^b   Klein, L J ^a   Chu, J O ^c   Mooney, P M ^d   Van Der Weide, D W ^a   Joynt, Robert ^a   Coppersmith, S N ^a   Eriksson, Mark A ^a  

^a University of Wisconsin ^*  (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; NANOCRYSTALS; POINT CONTACTS; QUANTUM CHEMISTRY; QUANTUM OPTICS; QUBITS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON COMPOUNDS;

ELECTRON WAVEFUNCTIONS; LATERAL CONFINEMENT; MAGNETIC CONFINEMENT; QUANTUM COMPUTING; QUANTUM DOT QUBITS; QUANTUM POINT CONTACT; QUANTUM WELL INTERFACES; SILICON-BASED DEVICES;

LANDFORMS;

EID: 33845993971     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys475     Document Type: Article

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