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Volumn 54, Issue 3, 2006, Pages 299-307

Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPS; TRAP STATES; ZEEMAN SHIFT;

EID: 33846298872     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2006-00452-x     Document Type: Article
Times cited : (72)

References (42)
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    • B.E. Kane, Nature 393, 133 (1998)
    • (1998) Nature , vol.393 , pp. 133
    • Kane, B.E.1
  • 22
    • 0003319748 scopus 로고
    • Electronic properties of doped semiconductors
    • Springer
    • B.I. Shklovskii, A.L. Efros, Electronic properties of doped semiconductors, Number 45 in Solid State Sciences (Springer, 1984)
    • (1984) Solid State Sciences , Issue.45
    • Shklovskii, B.I.1    Efros, A.L.2
  • 31
    • 33846329596 scopus 로고    scopus 로고
    • Single charge tunneling: Coulomb blockade phenomena in nanostructures, edited by H. Grabert, M.H. Devoret, 294 of NATO ASI series B: Physics (Plenum Press, 1992)
    • Single charge tunneling: Coulomb blockade phenomena in nanostructures, edited by H. Grabert, M.H. Devoret, Vol. 294 of NATO ASI series B: Physics (Plenum Press, 1992)
  • 41
    • 36149015145 scopus 로고
    • G. Feher, Phys. Rev. 114, 1219 (1959)
    • (1959) Phys. Rev , vol.114 , pp. 1219
    • Feher, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.