Long-term stability and electrical performance of organic monolayers on hydrogen-terminated silicon

Journal of Physical Chemistry C

Volumn 114, Issue 24, 2010, Pages 10866-10872

  Popoff, Richard T W ^a   Asanuma, Hidehiko ^a   Yu, Hua Zhong ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED OXYGEN; AMBIENT CONDITIONS; CARBON CONTENT; COVALENTLY BONDED; ELECTRICAL CURRENT FLOW; ELECTRICAL PERFORMANCE; GRADUAL OXIDATION; HIGH RESOLUTION; HYDROGEN-TERMINATED SILICON; LONG TERM STABILITY; MOLECULAR DIODES; N TYPE SILICON; ORGANIC MONOLAYERS; OXYGEN CONTENT; OXYGEN-CONTAINING SPECIES; PEAK AREA RATIOS; SLOW OXIDATION; XPS ANALYSIS;

ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; MERCURY (METAL); MONOLAYERS; OXIDATION; OXYGEN; SILICON COMPOUNDS; SILICON OXIDES;

SILICON;

EID: 77953763784     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp101595w     Document Type: Article

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